Oxidation of indium implanted aluminium studied by the Rutherford backscattering and perturbed angular correlation methods
Identifieur interne : 000529 ( Main/Exploration ); précédent : 000528; suivant : 000530Oxidation of indium implanted aluminium studied by the Rutherford backscattering and perturbed angular correlation methods
Auteurs : RBID : ISTEX:10751_1988_Article_BF02394447.pdfAbstract
Aluminium foils oversaturated with 5.1015/cm2 implanted115In+ ions were oxidized in 200 mbar oxygen or vacuum annealed at 370–870 K. The samples were analyzed by the Rutherford backscattering (RBS) and perturbed angular correlation (PAC) techniques, using some 1011/cm2 implanted radioactive111In tracers. Furthermore, the oxygen surface profiles were also scanned with high resolution by using the nuclear resonance technique (NRA). The formation of passivating Al2O3 surface layers, preventing deeper oxygen diffusion and the indium diffusion into these oxidized surface layers and into the bulk, were studied. Several quadrupole interaction frequencies previously attributed to strained cubic indium precipitates and indium (-vacancy) clusters were observed. When the samples were oxidized above 750 K, the formation of In-O complexes and of substitutional111In in Al2O3 was observed.
DOI: 10.1007/BF02394447
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Physikalisches Institut der Universität Göttingen and Sonderforschungsbereich 126, Göttingen/Clausthal, D-3400, Göttingen, FRG</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>II. Physikalisches Institut der Universität Göttingen and Sonderforschungsbereich 126, Göttingen/Clausthal, D-3400, Göttingen</wicri:regionArea><placeName><region type="land" nuts="2">Basse-Saxe</region><settlement type="city">Göttingen</settlement></placeName></affiliation></author><author><name>M. Uhrmacher</name><affiliation wicri:level="3"><mods:affiliation>II. Physikalisches Institut der Universität Göttingen and Sonderforschungsbereich 126, Göttingen/Clausthal, D-3400, Göttingen, FRG</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>II. Physikalisches Institut der Universität Göttingen and Sonderforschungsbereich 126, Göttingen/Clausthal, D-3400, Göttingen</wicri:regionArea><placeName><region type="land" nuts="2">Basse-Saxe</region><settlement type="city">Göttingen</settlement></placeName></affiliation></author><author><name>K. P. Lieb</name><affiliation wicri:level="3"><mods:affiliation>II. Physikalisches Institut der Universität Göttingen and Sonderforschungsbereich 126, Göttingen/Clausthal, D-3400, Göttingen, FRG</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>II. Physikalisches Institut der Universität Göttingen and Sonderforschungsbereich 126, Göttingen/Clausthal, D-3400, Göttingen</wicri:regionArea><placeName><region type="land" nuts="2">Basse-Saxe</region><settlement type="city">Göttingen</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:10751_1988_Article_BF02394447.pdf</idno><date when="1988">1988</date><idno type="doi">10.1007/BF02394447</idno><idno type="wicri:Area/Main/Corpus">000341</idno><idno type="wicri:Area/Main/Curation">000341</idno><idno type="wicri:Area/Main/Exploration">000529</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">Aluminium foils oversaturated with 5.1015/cm2 implanted115In+ ions were oxidized in 200 mbar oxygen or vacuum annealed at 370–870 K. The samples were analyzed by the Rutherford backscattering (RBS) and perturbed angular correlation (PAC) techniques, using some 1011/cm2 implanted radioactive111In tracers. Furthermore, the oxygen surface profiles were also scanned with high resolution by using the nuclear resonance technique (NRA). The formation of passivating Al2O3 surface layers, preventing deeper oxygen diffusion and the indium diffusion into these oxidized surface layers and into the bulk, were studied. Several quadrupole interaction frequencies previously attributed to strained cubic indium precipitates and indium (-vacancy) clusters were observed. When the samples were oxidized above 750 K, the formation of In-O complexes and of substitutional111In in Al2O3 was observed.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="39e5f2270ac357b20e9babef33ebee688e6be2b1"><titleInfo lang="eng"><title>Oxidation of indium implanted aluminium studied by the Rutherford backscattering and perturbed angular correlation methods</title></titleInfo><name type="personal"><namePart type="given">J.</namePart><namePart type="family">Kesten</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>II. Physikalisches Institut der Universität Göttingen and Sonderforschungsbereich 126, Göttingen/Clausthal, D-3400, Göttingen, FRG</affiliation></name><name type="personal"><namePart type="given">P.</namePart><namePart type="family">Wodniecki</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>II. 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Physikalisches Institut der Universität Göttingen and Sonderforschungsbereich 126, Göttingen/Clausthal, D-3400, Göttingen, FRG</affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Kluwer Academic Publishers, Dordrecht</publisher><dateCreated encoding="w3cdtf">1987-11-27</dateCreated><dateValid encoding="w3cdtf">2006-04-05</dateValid><copyrightDate encoding="w3cdtf">1988</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">Aluminium foils oversaturated with 5.1015/cm2 implanted115In+ ions were oxidized in 200 mbar oxygen or vacuum annealed at 370–870 K. The samples were analyzed by the Rutherford backscattering (RBS) and perturbed angular correlation (PAC) techniques, using some 1011/cm2 implanted radioactive111In tracers. Furthermore, the oxygen surface profiles were also scanned with high resolution by using the nuclear resonance technique (NRA). The formation of passivating Al2O3 surface layers, preventing deeper oxygen diffusion and the indium diffusion into these oxidized surface layers and into the bulk, were studied. Several quadrupole interaction frequencies previously attributed to strained cubic indium precipitates and indium (-vacancy) clusters were observed. When the samples were oxidized above 750 K, the formation of In-O complexes and of substitutional111In in Al2O3 was observed.</abstract><relatedItem type="series"><titleInfo type="abbreviated"><title>Hyperfine Interact</title></titleInfo><titleInfo><title>Hyperfine Interactions</title><partNumber>Year: 1988</partNumber><partNumber>Volume: 39</partNumber><partNumber>Number: 2</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1988-06-01</dateIssued><copyrightDate encoding="w3cdtf">1988</copyrightDate></originInfo><subject usage="primary"><topic>Physics</topic><topic>Nuclear Physics, Heavy Ions, Hadrons</topic><topic>Atoms, Molecules, Clusters and Plasmas</topic><topic>Condensed Matter</topic><topic>Surfaces and Interfaces, Thin Films</topic></subject><identifier type="issn">0304-3843</identifier><identifier type="issn">Electronic: 1572-9540</identifier><identifier type="matrixNumber">10751</identifier><identifier type="local">IssueArticleCount: 13</identifier><recordInfo><recordOrigin>J.C. 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Baltzer AG, Scientific Publishing Company, 1988</recordOrigin><recordIdentifier>10751_1988_Article_BF02394447.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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